منابع مشابه
InAs-based heterostructure barrier varactor diodes with In0.3Al0.7As0.4Sb0.6 as the barrier material
InAs-based heterostructure barrier varactor (HBV) diodes with In0.3Al0.7As0.4Sb0.6 as the barrier material are demonstrated. Current–voltage and capacitance–voltage characteristics, as well as S-parameters, of HBV diodes with varying barrier thicknesses are examined. Maximum capacitance values and maximum-to-minimum capacitance ratios greater than those predicted by traditional HBV models were ...
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The heterostructure barrier varactor [1] consists of a layer-cake of alternating low and high band-gap semiconductor materials, for example GaAs and AlGaAs. As bias is applied in either direction across the layers, the electrons in the moderately doped low band-gap layers form a two-dimensional electron gas against the conduction band discontinuity at the heterojunction. Thus, most of each low ...
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a Institute of Electrical Engineering, Slovak Academy of Sciences, Dúbravská cesta 9, 841 04 Bratislava, Slovakia b Department of Physics, University of Central Florida, Orlando, FL 32816-2385, USA c Graduate Institute of Electro-Optical Engineering, Chang Gung University, Tao-Yuan 333, Taiwan d Institute of Electro-Optical Engineering, Green Technology Research Center, Chang Gung University, T...
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ژورنال
عنوان ژورنال: IEEE Transactions on Microwave Theory and Techniques
سال: 2000
ISSN: 0018-9480
DOI: 10.1109/22.841959